| 发明名称 |
POWER SEMICONDUCTOR DEVICES, METHODS, AND STRUCTURES WITH Embedded Dielectric Layers Containing Permanent Charges |
| 摘要 |
Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.
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| 申请公布号 |
US2011079843(A1) |
申请公布日期 |
2011.04.07 |
| 申请号 |
US20100759696 |
申请日期 |
2010.04.13 |
| 申请人 |
MAXPOWER SEMICONDUCTOR, INC. |
发明人 |
DARWISH MOHAMED N.;ZENG JUN;BLANCHARD RICHARD A. |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
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