| 摘要 |
A photoelectric conversion device with high photoelectric conversion efficiency is provided. The photoelectric conversion device of the invention includes a layered structure formed on a substrate, the layered structure including a first electrode, a photoelectric conversion semiconductor layer and a second electrode, wherein the photoelectric conversion semiconductor layer containing, as the main component, at least one compound semiconductor containing a group Ib element, a group IIIb element and a group VIb element, and contains one or two or more alkaline(-earth) metals, wherein the concentration distribution of the alkaline(-earth) metal in the photoelectric conversion semiconductor layer in the thickness direction includes a valley position with the lowest concentration of the alkaline(-earth) metal and an area with a concentration of the alkaline(-earth) metal higher than the concentration at the valley position, the area being nearer to the substrate from the valley position, and wherein Expressions (1) and (2) below are satisfied: 1.0x10-6 = a [mol/cc]= 2.0x10-5 (1) and 1.5 = b/a = 4.0 (2), wherein "a" [mol/cc] represents the concentration of the alkaline(-earth) metal at the valley position, and "b" [mol/cc] represents the highest concentration of the alkaline(-earth) metal at a position nearer to the substrate from the valley position. |
