| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology for manufacturing a photoelectric conversion element using a crystalline semiconductor film which is dense with no cavity among crystal particles. <P>SOLUTION: In the photoelectric converter, a first electrode, a unit cell, and a second electrode are formed on a substrate. A semiconductor film which constitutes the unit cell for performing photoelectric conversion is formed by following procedures. The pressure of reactive gas in a chamber of a plasma CVD device is set to be 450-13,332 Pa. The interval between the first electrode and the second electrode of the plasma CVD device is set to be 1-20 mm. By supplying a high frequency power of 60 MHz or less to the first electrode, a plasma region is formed between the first electrode and the second electrode. In the gaseous phase containing the plasma region, a deposition precursor comprising a semiconductor having crystallinity is formed. By depositing the deposition precursor, crystal nucleus of 5-15 nm are formed for crystal growth from the crystal nucleus. <P>COPYRIGHT: (C)2011,JPO&INPIT |
