| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing variation in high-frequency characteristics. <P>SOLUTION: The semiconductor device includes: a semiconductor substrate 101 having a principal surface including a first and a second region where a high-frequency circuit element is formed, a third region between the first region and second region, and a fourth region where a low-frequency circuit element is formed; a sealing resin covering the principal surface; a plurality of first external terminals; a plurality of second external terminals electrically connected to the low-frequency circuit element; a first electrode pad electrically connected to the high-frequency circuit element; a second electrode pad electrically connected to the low-frequency circuit element; an insulating film formed on the principal surface to expose a part of a surface of the first electrode and a part of a surface of the second electrode pad; first wiring electrically connecting the first electrode pad to the first external terminals; second wiring electrically connecting the second electrode pad to the second external terminals; and an inductor element connected between the first electrode pad in the first region and the first electrode pad in the second region. <P>COPYRIGHT: (C)2011,JPO&INPIT |
