METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enhance the quality of a film by suppressing the incorporation of impurities into the thin film. SOLUTION: A method for manufacturing a semiconductor device includes the steps of: supplying a halogen-containing gas into a treatment chamber for treating a substrate therein; supplying a source gas which is different from the halogen-containing gas into the treatment chamber; producing active species of the source gas in the vicinity of the substrate by supplying an electron-beam into the treatment chamber; forming a thin film on the substrate by making the active species of the source gas react with the halogen-containing gas; supplying a hydrogen-containing gas into the treatment chamber; producing active species of the hydrogen-containing gas in the vicinity of the substrate by supplying an electron-beam into the treatment chamber; and reforming the thin film which has been formed on the substrate by making the active species of the hydrogen-containing gas react with halogen elements in the thin film which has been formed on the substrate. COPYRIGHT: (C)2011,JPO&INPIT