发明名称 SUBSTRATE TREATMENT DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment device in which footprint can be suppressed. SOLUTION: The substrate treatment device includes: a substrate holder holding a substrate; an ion source generating ions; a target irradiated with ions generated from the ion source; a rotary shaft arranged in such a manner that the substrate holder is located in the elongating direction of the shaft; a plurality of elongating parts elongating to directions vertical to the rotary shaft and also to the different directions; target chucks respectively provided at the elongating parts and holding each target in such a manner that the distance between the rotary shaft and the target is shortened as it is made close to the substrate holder side; and a rotary device rotating the rotary shaft. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011068966(A) 申请公布日期 2011.04.07
申请号 JP20090222262 申请日期 2009.09.28
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 HARA DAISUKE;NIIMURA NORIHIRO;MUROBAYASHI MASASUE;NATSUI KENICHI
分类号 C23C14/46;H01L21/8246;H01L27/105;H01L43/08;H01L43/12 主分类号 C23C14/46
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