发明名称 |
METHOD OF CRYSTALLIZING AMORPHOUS SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A method of crystallizing an amorphous semiconductor film, the method comprising the steps of: forming a gate electrode on a transparent insulating substrate; forming a gate insulating film on the transparent insulating substrate and on an upper part of the gate electrode; forming an amorphous semiconductor film on the gate insulating film; forming a light-transmissive insulating film on the amorphous semiconductor film; forming a metal film having an opening on the light-transmissive insulating film; irradiating laser light onto both a region of the light-transmissive insulating film exposed by the opening and the metal film, which is used as a mask for shielding the laser light; and performing laser annealing to make the laser light to be absorbed through the light-transmissive insulating film into a region of the amorphous semiconductor film exposed by the opening, so that the amorphous semiconductor film is heated and converted to a crystalline semiconductor film.
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申请公布号 |
US2011079780(A1) |
申请公布日期 |
2011.04.07 |
申请号 |
US20100888779 |
申请日期 |
2010.09.23 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
YAMAYOSHI KAZUSHI;TAKEGUCHI TORU;AOKI KAZUTOSHI |
分类号 |
H01L21/268;H01L21/20;H01L29/04 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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