| 摘要 |
<p>PURPOSE: A method for measuring a step difference in a semiconductor device is provided to easily measure a step difference of a layer to be measured without loss of a wafer by wafer cutting. CONSTITUTION: A planarization process is performed after a planarization material layer is formed on a lower structure(110). A photosensitive pattern for measuring a step difference with a scum is formed on the non-polarization material layer(120). A step difference of the planarization material layer is measured by measuring the size of the scum according to a location of a wafer(130). A photosensitive pattern for measuring the step difference is eliminated.</p> |
