发明名称 |
STRUCTURE AND PROCESS FOR FABRICATING A MICROELECTRONIC 3D NAND FLASH MEMORY DEVICE |
摘要 |
A microelectronic flash memory device including a plurality of memory cells including transistors fitted with a matrix of channels connecting a block of common source to a second block on which bit lines rest, the transistors also being formed by a plurality of gates including at least one gate material, including a first selection gate coating the channels, a plurality of control gates coating the channels, a plurality of second selection gates each coating the channels of the same row and the matricial arrangement, at least one or more of the gates based on superposition of layers including at least one first layer of dielectrical material, at least one charge store zone, and at least one second layer of dielectrical material. |
申请公布号 |
EP2304794(A1) |
申请公布日期 |
2011.04.06 |
申请号 |
EP20090793968 |
申请日期 |
2009.07.10 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
ERNST, THOMAS;MOLAS, GABRIEL;DE SALVO, BARBARA;BECU, STEPHANEL |
分类号 |
H01L27/115;H01L21/822;H01L21/8246;H01L27/06;H01L27/11568;H01L27/11578;H01L27/11582;H01L27/12 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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