METHOD OF FABRICATING OXIDE SEMICONDUCTOR DEVICE USING SOL-GEL PROCESS AND NANO-STRUCTURE, AND OXIDE SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD

摘要

PURPOSE: A method for manufacturing an oxide semiconductor device using a sol-gel process and a nano structure is provided to arrange a nano structure on a desired location of an electron device without separating and arranging the nano structure, thereby reducing the number of photo processes. CONSTITUTION: A first source/drain electrode(110), a second source/drain electrode(120), and a third source/drain electrode(130) are formed on a substrate. A copper layer(140) is formed on the third source/drain electrode. A sol solution based on an oxide semiconductor is prepared. The sol solution is supplied to the substrate to form a first conductive semiconductor layer(150). An acid component is applied to the copper layer and the copper layer is thermally processed so that a second conductive oxide copper nano structure.