发明名称 |
Gallium nitride substrate |
摘要 |
A gallium nitride (GaN) substrate hard to break and capable of enhancing a production yield is provided. The GaN substrate comprises a primary surface. The primary surface is tilted at an angle in the range of 20 to 160 degrees with respect to the C-plane of the substrate. The substrate has a fracture toughness of more than or equal to 1.36 MN/m 3/2 . |
申请公布号 |
EP2305860(A2) |
申请公布日期 |
2011.04.06 |
申请号 |
EP20100164201 |
申请日期 |
2010.05.28 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HACHIGO, AKIHIRO |
分类号 |
C30B29/40;C30B33/00 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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