发明名称 CIRCUIT AND METHOD FOR GENERATING REFERENCE VOLTAGE, PHASE CHANGE RANDOM ACCESS MEMORY APPARATUS AND READ OPERATION METHOD USING THE SAME
摘要 PURPOSE: A circuit and method for generating a reference voltage, a phase change random access memory apparatus and a read operation method using the same are provided to generate a reference voltage for a read operation based on the resistance change of a phase change material. CONSTITUTION: In a circuit and method for generating a reference voltage, a phase change random access memory apparatus and a read operation method using the same, at least one cell is composed of a variable resistance memory cell. A write driver(120) for the reference cell writes data in the reference cell(110). A sense amplifier(130) for a reference cell is read out data stored in the reference cell. A voltage compensation part(140) outputs a compensation reference voltage by controlling the reference voltage.
申请公布号 KR20110035744(A) 申请公布日期 2011.04.06
申请号 KR20090093576 申请日期 2009.09.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, HAE CHAN;LEE, SE HO;KIM, SOO GIL
分类号 G11C5/14;G11C7/10 主分类号 G11C5/14
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