发明名称 |
CIRCUIT AND METHOD FOR GENERATING REFERENCE VOLTAGE, PHASE CHANGE RANDOM ACCESS MEMORY APPARATUS AND READ OPERATION METHOD USING THE SAME |
摘要 |
PURPOSE: A circuit and method for generating a reference voltage, a phase change random access memory apparatus and a read operation method using the same are provided to generate a reference voltage for a read operation based on the resistance change of a phase change material. CONSTITUTION: In a circuit and method for generating a reference voltage, a phase change random access memory apparatus and a read operation method using the same, at least one cell is composed of a variable resistance memory cell. A write driver(120) for the reference cell writes data in the reference cell(110). A sense amplifier(130) for a reference cell is read out data stored in the reference cell. A voltage compensation part(140) outputs a compensation reference voltage by controlling the reference voltage.
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申请公布号 |
KR20110035744(A) |
申请公布日期 |
2011.04.06 |
申请号 |
KR20090093576 |
申请日期 |
2009.09.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK, HAE CHAN;LEE, SE HO;KIM, SOO GIL |
分类号 |
G11C5/14;G11C7/10 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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