| 摘要 |
PURPOSE: A high-speed vertical consecutive substrate processing system is provided to uniformly generate plasma on partition electrodes, thereby quickly processing a large substrate to have good quality. CONSTITUTION: A process chamber unit is made of consecutively arranged process chambers(130a,130b,130c). A plasma power source(200) supplies power to generate plasma to the process chambers. A gas supply system(300) supplies a processing gas to the process chambers. A heater power source(500) supplies power to a heater of a process chamber. A substrate transfer control system(600) transfers a substrate to consecutive process chambers.
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