VERTICAL NAND CHARGE TRAP FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

PURPOSE: A vertical NAND charge trap flash memory device and a manufacturing method thereof are provided to highly integrate a memory device by vertically connecting cell transistors with a charge trap layer in series. CONSTITUTION: A single crystal semiconductor channel(150) is vertically formed on a semiconductor substrate(100). A GSL(Ground Source Line) electrode(115) is adjacent to the semiconductor substrate and surrounds a signal crystal semiconductor channel. A tunnel oxide layer(145) surrounds the channel side of a single crystal semiconductor filler shape. First to n+1 interlayer insulation layers(120a,120b,120c,120d,120e) are formed on the GSL electrode. A charge trap layer(170) is formed between the first to n+1 interlayer insulation layers.