发明名称 METHOD OF DEPOSITING THIN FILM
摘要 PURPOSE: A method for depositing a thin film is provided to supply either one of a material gas or a reaction gas before/after the main process, thereby making the order of supplying a gas to all substrates the same. CONSTITUTION: A plurality of substrates is mounted on a substrate mounting unit(S510). Either one of a material gas or a reaction gas is supplied onto a substrate supporting unit through a gas spray unit(S520). A thin film is deposited on a substrate by supplying the material gas or the reaction gas onto the substrate supporting unit through the gas spray unit(S530). Either one of the material gas or the reaction gas is supplied onto the substrate supporting unit through the gas spray unit again(S540).
申请公布号 KR20110035220(A) 申请公布日期 2011.04.06
申请号 KR20090092843 申请日期 2009.09.30
申请人 ATTO CO., LTD. 发明人 AN, CHUL HYUN
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
主权项
地址