| 摘要 |
<p>The threshold value for a normally-off junction FET (1) is a low value. Accordingly, in a semiconductor driver circuit using the normally-off junction FET (1), there have existed such problems as high-accuracy voltage control, high-speed charging into an input capacitor (8), and misoperations. A semiconductor driver circuit which is the most suitable for the normally-off junction FET (1) is proposed by applying the high-accuracy gate-voltage generation scheme based on a Zener diode (14), a reduction in the turn-on loss based on a speed-up capacitor (15a), the connection of an inter-gate-source capacitor (17), and a misoperation-preventing circuit based on the source-terminal optimum implementation scheme.</p> |
