| 摘要 |
Disclosed is a voltage conversion circuit (10) comprising a flying capacitor (12) formed in or on a semiconductor substrate (26), said flying capacitor having a first electrode selectively coupled to an input node for connecting the flying capacitor between different voltage levels (V bat ; V 2 ) and a second electrode selectively coupled to an output node (V out ), wherein at least one of the first electrode and the second electrode form a first region of a parasitic capacitance (110), the second region of which is formed by a part of the substrate (or any other conductor at constant voltage), the voltage conversion circuit further comprising a biasing element (80) for increasing the impedance of the conductive path between the first region and the second region, wherein the biasing element is selected from the group consisting of a bias voltage source, a bias resistor and a series-connected capacitor, which may be provided by an additional PN junction.
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