Multi-layer electrode, cross point memory array and method of manufacturing the same

摘要

Provided may be a multi-layer electrode, a cross point resistive memory array and method of manufacturing the same. The array may include a plurality of first electrode lines (21) arranged parallel to each other; a plurality of second electrode lines (25) crossing the first electrode lines and arranged parallel to each other; and a first memory resistor (22) at intersections between the first electrode lines and the second electrode lines, wherein at least one of the first electrode lines and the second electrode lines have a multi-layer structure including a first conductive layer and a second conductive layer formed of a noble metal.