发明名称 TEST CIRCUIT, A SEMICONDUCTOR MEMORY APPARATUS USING THE SAME, AND TEST METHOD OF THE SEMICONDUCTOR MEMORY APPARATUS
摘要 PURPOSE: A test circuit, a semiconductor memory apparatus using the same, and a test method of the semiconductor memory apparatus are provided to increase the reliability of an USD test by applying the same condition to all activated mat. CONSTITUTION: In a test circuit, a semiconductor memory apparatus using the same, and a test method of the semiconductor memory apparatus, an active signal is enabled. Test control signal generating parts(100,200) enable a control signal. The test control signal generating part maintains an enabled control signal. A reserved bit line precharge signal is disabled. Precharge controllers(300~600) turns reversely the control signal. The precharge controller outputs the reserved control signal as the bit line precharge signal.
申请公布号 KR20110035778(A) 申请公布日期 2011.04.06
申请号 KR20090093611 申请日期 2009.09.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, YONG GU
分类号 G11C29/00;G11C5/14;G11C7/12 主分类号 G11C29/00
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