| 摘要 |
PROBLEM TO BE SOLVED: To set the temperature of a hot plate oven so that the line width of a resist pattern is formed uniformly in a wafer surface. SOLUTION: The hot plate oven of a PEB device is divided into a plurality of hot plate oven regions, and temperature can be set for each hot plate oven region. A temperature correction value for adjusting temperature in the surface of the hot plate oven can be set to each hot plate oven region in the hot oven plate. First, the line width of the inside of the wafer surface is measured after a photolithography process is completed, and a Zernike coefficient in a Zernike polynomial for indicating a plurality of in-plane pattern components is calculated from the in-plane line width measurement value of the wafer. Then, a temperature correction value of each region in the hot plate oven where the calculated Zernike coefficient approaches zero is calculated by a calculation model for indicating the correlation between the amount of change in the Zernike coefficient and the temperature correction value. The temperature of each region in the hot plate oven is set by each calculated temperature correction value. COPYRIGHT: (C)2008,JPO&INPIT |
