| 摘要 |
There is provided a semiconductor device which has a CMOS inverter circuit and which can accomplish high-integration by configuring an inverter circuit with a columnar structural body. A semiconductor device includes a columnar structural body which is arranged on a substrate and which comprises a p-type silicon 102, an n-type silicon 104, and an oxide 116 arranged between the p-type silicon 102 and the n-type silicon 104 and running in the vertical direction to the substrate, n-type high-concentration silicon layers 134,122 arranged on and below the p-type silicon 102, p-type high-concentration silicon layers 136,124 arranged on and below the n-type silicon 104, an insulator 127 which surrounds the p-type silicon 102, the n-type silicon 104, and the oxide 116, and which serves as a gate insulator, and a conductive body 128 which surrounds the insulator 127 and which serves as a gate electrode. |
