发明名称 SEMICONDUCTOR MEMORY APPARATUS AND TEST METHOD USING THE SAME
摘要 PURPOSE: A semiconductor memory apparatus and a test method using the same are provided to increase an USD test time regardless of the leakage current of a transistor. CONSTITUTION: In a semiconductor memory apparatus and a test method using the same, a precharge voltage controller(100) outputs a bit line prechrage voltage or a core voltage as a control voltage. A bit line equalizer(30-1) precharges a bit line by a control voltage. A sense amp drive controller(200) generates a first, a second, and a third voltage supply control signal. A power supply unit(50-1) supplies an external voltage, a core voltage, and a ground voltage.
申请公布号 KR20110035777(A) 申请公布日期 2011.04.06
申请号 KR20090093610 申请日期 2009.09.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SONG, CHOUNG KI;HUR, YOUNG DO;YOON, SANG SIC;KANG, YONG GU;KIM, GYUNG TAE
分类号 G11C29/00;G11C5/14;G11C7/12 主分类号 G11C29/00
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