发明名称 |
SEMICONDUCTOR MEMORY APPARATUS AND TEST METHOD USING THE SAME |
摘要 |
PURPOSE: A semiconductor memory apparatus and a test method using the same are provided to increase an USD test time regardless of the leakage current of a transistor. CONSTITUTION: In a semiconductor memory apparatus and a test method using the same, a precharge voltage controller(100) outputs a bit line prechrage voltage or a core voltage as a control voltage. A bit line equalizer(30-1) precharges a bit line by a control voltage. A sense amp drive controller(200) generates a first, a second, and a third voltage supply control signal. A power supply unit(50-1) supplies an external voltage, a core voltage, and a ground voltage.
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申请公布号 |
KR20110035777(A) |
申请公布日期 |
2011.04.06 |
申请号 |
KR20090093610 |
申请日期 |
2009.09.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
SONG, CHOUNG KI;HUR, YOUNG DO;YOON, SANG SIC;KANG, YONG GU;KIM, GYUNG TAE |
分类号 |
G11C29/00;G11C5/14;G11C7/12 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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