发明名称 |
Cleaning composition, cleaning process, and process for producing semiconductor device |
摘要 |
A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition. |
申请公布号 |
EP2305788(A1) |
申请公布日期 |
2011.04.06 |
申请号 |
EP20100177316 |
申请日期 |
2010.09.17 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
TAKAHASHI, TOMONORI;TAKAHASHI, KAZUTAKA;MIZUTANI, ATSUSHI;SEKI, HIROYUKI;FUSHIMI, HIDEO;KATO, TOMOO |
分类号 |
C11D11/00;C11D7/08;C11D7/50 |
主分类号 |
C11D11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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