发明名称 SEMICONDUCTOR DEVICE WITH ONE SIDE CONTACT AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor device with a single side wall contact and manufacturing method thereof are provided to perform counter doping in a side wall opposite to cell bonding, thereby preventing floating body effects due to excessive spreading of cell bonding. CONSTITUTION: A first conductive layer pattern(22A) and a second conductive layer pattern(23A) are stacked on an active area(101). A hard mask film pattern(24A) is formed on the active area. A side wall contact(30) is connected to a side wall of a conductive layer pattern of the active area. A metal bit line(31) is connected to the side wall contact to partially embed a trench(26). A side wall oxide film(27) is formed on the side wall of the active area and a semiconductor substrate(21).
申请公布号 KR20110035687(A) 申请公布日期 2011.04.06
申请号 KR20090093500 申请日期 2009.09.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JIN KU;LEE, YOUNG HO;LEE, MI RI
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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