发明名称 |
SEMICONDUCTOR DEVICE WITH ONE SIDE CONTACT AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A semiconductor device with a single side wall contact and manufacturing method thereof are provided to perform counter doping in a side wall opposite to cell bonding, thereby preventing floating body effects due to excessive spreading of cell bonding. CONSTITUTION: A first conductive layer pattern(22A) and a second conductive layer pattern(23A) are stacked on an active area(101). A hard mask film pattern(24A) is formed on the active area. A side wall contact(30) is connected to a side wall of a conductive layer pattern of the active area. A metal bit line(31) is connected to the side wall contact to partially embed a trench(26). A side wall oxide film(27) is formed on the side wall of the active area and a semiconductor substrate(21). |
申请公布号 |
KR20110035687(A) |
申请公布日期 |
2011.04.06 |
申请号 |
KR20090093500 |
申请日期 |
2009.09.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, JIN KU;LEE, YOUNG HO;LEE, MI RI |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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