发明名称 |
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate |
摘要 |
A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.
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申请公布号 |
US7919393(B2) |
申请公布日期 |
2011.04.05 |
申请号 |
US20100769299 |
申请日期 |
2010.04.28 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
GHYSELEN BRUNO;MAZURE CARLOS;ARENE EMMANUEL |
分类号 |
H01L21/30;H01L21/20;H01L21/324;H01L21/46;H01L21/762 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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