A COMPACT, HIGH OUTPUT POWER DENSITY RF AMPLIFIER

摘要

PURPOSE: A high output power density RF amplifier is provided to obtain high PAE(Power Added Efficiency) by adding capacitive load in the end side of an emitter of a bias transistor. CONSTITUTION: A cascade amplifier includes a common emitter transistor(Q1) and a common base transistor(Q2). An inductor is formed between a base terminal of a common emitter transistor and an active bias circuit. A capacitive load is connected between the active bias circuit and the inductor. The capacitive load controls RF leakage power on a side of the active bias circuit. A micro-strip RFC(RF Choke) is formed between a collector terminal and a collector power source.