发明名称 |
Phase-change memory element |
摘要 |
A phase-change memory cell is proposed. The phase-change memory includes a bottom electrode; a phase-change spacer formed to contact the bottom electrode; an electrical conductive layer having a vertical portion and a horizontal portion, wherein the electrical conductive layer electrically connects to the phase-change spacer via the horizontal portion; and a top electrode electrically connected to the electrical conductive layer via the vertical portion of the electrically conductive layer.
|
申请公布号 |
US7919768(B2) |
申请公布日期 |
2011.04.05 |
申请号 |
US20080172162 |
申请日期 |
2008.07.11 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHEN FREDERICK T;TSAI MING-JINN |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|