发明名称 Method and integrated circuits capable of saving layout areas
摘要 An integrated circuit includes a diffusion layer, a first poly-silicon layer, and a second poly-silicon layer. The first poly-silicon layer is located on the diffusion layer to form a transistor. The second poly-silicon includes a first section and a second section. The first section of the second poly-silicon layer is located on the first poly-silicon layer to form a capacitor. The second section of the second poly-silicon layer is located on the diffusion layer to form a resistor.
申请公布号 US7919821(B2) 申请公布日期 2011.04.05
申请号 US20080100394 申请日期 2008.04.09
申请人 NOVATEK MICROELECTRONICS CORP. 发明人 LI YAN-NAN;CHIANG HSUEH-LI
分类号 H01L29/43;H01L29/49;H01L29/92 主分类号 H01L29/43
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