| 摘要 |
<p>1,242,660. Electroluminescence. SIEMENS A.G. 29 Sept., 1969 [30 Sept., 1968]. No. 47761/69. Heading C4S. [Also in Division Hi] A luminescent PN diode 1 is supported on a tantalum oxide layer 2 on a tantalum body 3. A nickel contact 6 is connected between the body and one zone of the diode via a hole in the oxide while the other zone is connected to a chromiumnickel layer 7 applied over the oxide. The diode is preferably of gallium arsenide and may be of Weierstrasse geometry. Contact 7 may be gilded and it and contact 6 are tin soldered to the diode zones to seal off the PN junction. Contact 6 may be soldered to the tantalum plate 3 prior to oxidation of the latter, or welded or deposited thereon via an aperture etched in the oxide layer.</p> |
