发明名称 Photonic integration scheme
摘要 Provided is an apparatus and method for manufacture thereof. The apparatus includes a passive optical waveguide structure and a photodiode detector structure. The structures are located on a substrate, and the photodiode detector is laterally proximate to the semiconductor passive waveguide structure. The passive optical waveguide structure includes a first lateral portion of a semiconductor optical core layer on the substrate, a semiconductor upper optical cladding layer on the optical core layer, and a first lateral portion of a doped semiconductor layer on the upper optical cladding layer. The photodiode detector structure includes a second lateral portion of the semiconductor optical core layer, a semiconductor optical absorber layer on the optical core layer, and a second lateral portion of the doped semiconductor layer.
申请公布号 US7919349(B2) 申请公布日期 2011.04.05
申请号 US20090391039 申请日期 2009.02.23
申请人 ALCATEL-LUCENT USA INC. 发明人 DOERR CHRISTOPHER RICHARD;ZHANG LIMING
分类号 H01L21/00;H01S5/00 主分类号 H01L21/00
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