| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to perform a programming operation and an erasing operation through only the F-N tunneling by using an erasing control gate and a programming control gate. CONSTITUTION: A source region(120) and a drain region(140) are formed on a semiconductor substrate(100). A first poly silicon layer is formed on the semiconductor substrate. A patterned nitride layer(180) is formed on the first poly silicon layer with a constant gap. A floating gate(160) is formed by patterning the first poly silicon layer. An insulation layer is formed on the semiconductor substrate. A spacer(200) is formed on the sidewall of the floating gate and the nitride layer by etching the insulation layer.</p> |
