NON-VOLATILE MEMORY DEVICE AND NON-VOLATILE MEMORY SYSTEM HAVING THE SAME

摘要

PURPOSE: A non-volatile memory device and a non-volatile memory system having the same are provided to reduce a floating gate coupling by making the level of a dummy reading voltage lower than a reading voltage. CONSTITUTION: In a non-volatile memory device and a non-volatile memory system having the same, a memory cell array(110) comprises first and second dummy memory cells. The memory cell array comprises a NAND string. The NAND string is comprised of a plurality of memory cells. A row selection circuit(200) is connected to the memory cell array. The row selection circuit transfers a word line voltage to word lines. A voltage generating circuit(300) generates the word line voltage.