发明名称 Method and structure for ballast resistor
摘要 A method for fabricating a low-value resistor such as a ballast resistor for bipolar junction transistors. The resistor may be fabricated using layers of appropriate sheet resistance so as to achieve low resistance values in a compact layout. The method may rely on layers already provided by a conventional CMOS process flow, such as contact plugs and fully silicided (FUSI) metal gates.
申请公布号 US7919830(B2) 申请公布日期 2011.04.05
申请号 US20080062262 申请日期 2008.04.03
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 COOLBAUGH DOUGLAS D.;ESHUN EBENEZER E.;HE ZHONG-XIANG;RASSEL ROBERT M.;WATSON KIMBALL M.
分类号 H01L21/8222 主分类号 H01L21/8222
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