发明名称 |
Semiconductor light-emitting device and method for making same |
摘要 |
One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.
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申请公布号 |
US7919784(B2) |
申请公布日期 |
2011.04.05 |
申请号 |
US20060063978 |
申请日期 |
2006.09.30 |
申请人 |
LATTICE POWER (JIANGXI) CORPORATION |
发明人 |
JIANG FENGYI;WANG LI;FANG WENQING |
分类号 |
H01L33/00;H01L33/32;H01L33/06;H01L33/10;H01L33/38;H01L33/40 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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