| 摘要 |
By making Nd concentration in the tunneling insulating film 11 smaller than Nd concentration in the base electrode first layer 16, the accumulated electric charge amount in the tunneling insulating film 11 is reduced and afterimage is decreased. By setting a relation between a position of a stack interface of the base electrode 13 and a thickness of an insulating layer properly, the generation of a device defect is prevented.
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