发明名称 |
Method of applying wire voltage to semiconductor device |
摘要 |
A method of applying a wire voltage to a semiconductor device including a plurality of active regions and a field region insulating the plurality of active regions, wherein the field region includes a plurality of wires. The method includes applying an operating voltage required for an operation of the semiconductor device to at least one of the plurality of wires, and applying a voltage lower than the operating voltage to a wire adjacent to at least one of the plurality of active regions from among the plurality of wires. Thus, leakage current caused by an imaginary parasitic transistor due to a wire of the field region may be prevented.
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申请公布号 |
US7920021(B2) |
申请公布日期 |
2011.04.05 |
申请号 |
US20090580299 |
申请日期 |
2009.10.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH JIN-YONG;JO SANG-YOUN;LEE JOON-HEE;YUN JAE-SUN;KIM SEONG-SOO |
分类号 |
H01L25/00 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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