发明名称 Method of applying wire voltage to semiconductor device
摘要 A method of applying a wire voltage to a semiconductor device including a plurality of active regions and a field region insulating the plurality of active regions, wherein the field region includes a plurality of wires. The method includes applying an operating voltage required for an operation of the semiconductor device to at least one of the plurality of wires, and applying a voltage lower than the operating voltage to a wire adjacent to at least one of the plurality of active regions from among the plurality of wires. Thus, leakage current caused by an imaginary parasitic transistor due to a wire of the field region may be prevented.
申请公布号 US7920021(B2) 申请公布日期 2011.04.05
申请号 US20090580299 申请日期 2009.10.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 OH JIN-YONG;JO SANG-YOUN;LEE JOON-HEE;YUN JAE-SUN;KIM SEONG-SOO
分类号 H01L25/00 主分类号 H01L25/00
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