发明名称 Method for filling cavity in e.g. conductor substrate with nickel to form microsystem, involves partially removing masking layer from zone to partially or completely uncover cavity, and depositing metallic material in cavity
摘要 <p>The method involves forming a masking layer (106) on a support (100) e.g. conductor substrate, in which a cavity is formed, where the masking layer covers the support, cavity walls and cavity bottom and comprises a zone whose thickness is less than or equal to a given thickness on sides and the bottom of the cavity. The masking layer is partially removed from the zone to partially or completely uncover the cavity. A metallic material (108) is deposited in the cavity.</p>
申请公布号 FR2950732(A1) 申请公布日期 2011.04.01
申请号 FR20090058448 申请日期 2009.11.27
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 PARES GABRIEL
分类号 H01L21/027;H01L21/70 主分类号 H01L21/027
代理机构 代理人
主权项
地址