| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase shift mask that prevents the dimension of a pattern transferred to a photoresist from changing even if the exposure frequency increases, a method of manufacturing the phase shift mask, and a method of manufacturing a semiconductor device using the phase shift mask. <P>SOLUTION: The phase shift mask includes: a substrate 2 for transmitting exposure light; a semitransparent film 3 that is disposed on the substrate 2, has a transmittance to exposure light lower than that of the substrate 2, and shifts the phase of the exposure light; and a protective film 5 that covers the surface of the semitransparent film and transmits the exposure light. The protective film 5 contains oxide of at least one element selected from the group consisting of Al, Si, Ti, Hf, Zr, Cr, Ta, Y, Ce and Ni, and nitride of Al or Si. <P>COPYRIGHT: (C)2011,JPO&INPIT |
