| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that prevents leakage current. <P>SOLUTION: A memory string MS includes memory transistors MTr1 to MTr8 connected in series. A control circuit AR2 reads data from the memory transistors MTr1 to 8. The memory string MS includes a U-shaped semiconductor layer 34 functioning as bodies of the memory transistors MTr1 to 8, a charge storage layer 33b formed to surround the U-shaped semiconductor layer 34 and configured to hold data by storing charges, and word line conductive layers 31a to 31d formed to surround the U-shaped semiconductor layer 34 via the charge storage layer 33b. In a reading operation, the control circuit AR2 applies a reading pulse voltage Vread to the gate of at least one of the memory transistors MTr1 to MTr8 of the unselected memory string MS, and applies ground potential Vss to the gate of another memory transistor MTr. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
