| 摘要 |
PROBLEM TO BE SOLVED: To provide an amorphous oxide semiconductor material that reduces light absorption to light having a wavelength within a visible-light short-wavelength range of 400 to 420 nm. SOLUTION: There is provided the amorphous oxide semiconductor material including an amorphous oxide semiconductor including In, Ga and Zn, wherein when In:Ga:Zn=a:b:c denotes an element composition ratio of the oxide semiconductor, the element composition ratio is defined by the range of a+b=2 and b<2 and c<4b-3.2 and c>-5b+8 and 1≤c≤2. COPYRIGHT: (C)2011,JPO&INPIT |
