发明名称 |
INFORMATION STORAGE DEVICE INCLUDING VERTICAL NANO WIRE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a relatively high-integration and high-capacity information storage device having a memory cell region achieved by using a vertical nano wire structure. <P>SOLUTION: A memory cell includes: a memory cell array part having a substrate, a plurality of nano wires arranged vertically on the substrate, wherein each of the plurality of nano wires includes a plurality of domains for storing information; a nano wire selection part formed on the substrate and configured to select at least one of the plurality of nano wires; a domain movement control part 14 formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and a read/write control part 15 formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011066396(A) |
申请公布日期 |
2011.03.31 |
申请号 |
JP20100173636 |
申请日期 |
2010.08.02 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM HO-JUNG;SHIN JAI-KWANG;SEO SUN-AE;LEE SUNG-CHUL |
分类号 |
H01L27/105;G11C11/15;H01L21/8246 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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