| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride crystal in which threading dislocations are reduced by a crystal growth method using an alkali metal as a flux. SOLUTION: A GaN crystal comprises a base body 5 and GaN crystals 530 and 550. The base body 5 comprises a sapphire substrate 501 and a GaN film 502. The GaN film 502 includes threading dislocations 5021. The GaN crystal 530 is grown on the GaN film 502 of the base body 5 and comprises a plurality of domains 520 each having an oblique facet 521. The GaN crystal 550 is formed on the GaN crystal 530 and comprises a plurality of domains 540. COPYRIGHT: (C)2011,JPO&INPIT |
