发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents malfunction due to noise generated by variation in sense amplifier ground potential. SOLUTION: The semiconductor device has: a pad for the sense amplifier ground potential, as an electrode pad for supplying the ground potential to a sense amplifier; a first conductive line, connected to the pad for the sense amplifier ground potential; and a second conductive line, connected to an electrode pad shortest in distance to the pad for the sense amplifier ground potential in a plurality of electrode pads included in a pad array. Here, the second conductive line is extended to the opposite side of the first conductive line with reference to the pad array. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011066050(A) 申请公布日期 2011.03.31
申请号 JP20090213112 申请日期 2009.09.15
申请人 ELPIDA MEMORY INC 发明人 TAKEDA HIROMASA;ISA SATOSHI;KOBAYASHI KATSUTARO;KATAGIRI MITSUAKI
分类号 H01L27/10;G11C11/401;H01L21/8242;H01L27/108 主分类号 H01L27/10
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