METHOD FOR FORMING COPPER LAYER ON SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide an electroplating method capable of controlling a plating operations dynamically. SOLUTION: The electroplating method for forming a copper layer on a wafer 20 includes: a stage for placing the wafer 20 in an electroplating chamber 10, wherein the electroplating chamber (10) has a control system 34 that is electrically coupled to the wafer 20 through at least one electrical contact 18, and wherein the control system 34 provides power to the wafer 20; a stage for powering the wafer 20 to electroplate copper onto the wafer 20; and a stage for monitoring an electrical property of the wafer 20 during electroplating to determine when to change conditions in the electroplating chamber 10. COPYRIGHT: (C)2011,JPO&INPIT