| 摘要 |
A method is provided for reworking film structures containing silicon-containing anti-reflective coating (SiARC) layers in semiconductor device manufacturing. The method includes providing a substrate containing a film stack that includes SiARC layer thereon, and a resist pattern formed on the SiARC layer. The method further includes removing the resist pattern from the SiARC layer, exposing the SiARC layer to process gas containing ozone (O3) gas to modify the SiARC layer, treating the modified SiARC layer with a dilute hydrofluoric acid (DHF) liquid, and centrifugally removing the modified SiARC layer from the substrate.
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