This apparatus has two mask segments. Each mask segment has apertures that an ion beam may pass through. These mask segments can move between a first and second position using hinges. One or more workpieces are disposed behind the mask segments when these mask segments are in a second position. The two mask segments are configured to cover the one or more workpieces in one instance. Ions are implanted into the one or more workpieces through the apertures in the mask segments.
申请公布号
WO2010120765(A3)
申请公布日期
2011.03.31
申请号
WO2010US30874
申请日期
2010.04.13
申请人
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;VOPAT, ROBERT, B.;CARLSON, CHARLES;WEAVER, WILLIAM, T.
发明人
VOPAT, ROBERT, B.;CARLSON, CHARLES;WEAVER, WILLIAM, T.