发明名称 PLASMA CVD APPARATUS AND FILM DEPOSITION METHOD BY PLASMA CVD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus and a film deposition method by the plasma CVD capable of enhancing the uniformity of a film on a substrate by using a raw material gas feeding mechanism with easy maintenance at low cost in addition to a shower head electrode. <P>SOLUTION: In the plasma CVD apparatus for depositing a thin film on a surface of a substrate 1 by the plasma CVD film deposition method by feeding raw material gas in a vacuum vessel 2, a shower head electrode 9 for feeding raw material gas is arranged in the vacuum vessel 2, and a gas feeding mechanism 14 for feeding raw material gas to the shower head electrode 9 from the side surface direction is further arranged. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011063827(A) 申请公布日期 2011.03.31
申请号 JP20090213450 申请日期 2009.09.15
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 TAKENAKA KENSUKE
分类号 C23C16/455;H01L31/04 主分类号 C23C16/455
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