摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus and a film deposition method by the plasma CVD capable of enhancing the uniformity of a film on a substrate by using a raw material gas feeding mechanism with easy maintenance at low cost in addition to a shower head electrode. <P>SOLUTION: In the plasma CVD apparatus for depositing a thin film on a surface of a substrate 1 by the plasma CVD film deposition method by feeding raw material gas in a vacuum vessel 2, a shower head electrode 9 for feeding raw material gas is arranged in the vacuum vessel 2, and a gas feeding mechanism 14 for feeding raw material gas to the shower head electrode 9 from the side surface direction is further arranged. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |