发明名称 SURFACE-EMITTING SEMICONDUCTOR LASER, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser controlling a polarization direction. <P>SOLUTION: The surface-emitting semiconductor laser 10 has: a substrate 100; an n-type lower DBR 102 formed on the substrate; an active region 104; a p-type upper DBR 106; a p-side electrode 112 having a light emission port 112A formed for emitting laser light; and an insulative film 120 formed to partially cover the light emission port 112A, structured of a material transparent to an oscillation wavelength of the laser light and anisotropic in lengthwise and breadthwise directions. Reflectivity of the upper DBR 106 having the insulative film 120 formed is larger than that of the upper DBR 106 having the insulative film 120 not formed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011066125(A) 申请公布日期 2011.03.31
申请号 JP20090214447 申请日期 2009.09.16
申请人 FUJI XEROX CO LTD 发明人 SAKURAI ATSUSHI;OTOMA HIROKI;ISHII RYOJI;UEKI NOBUAKI
分类号 H01S5/183;H01S5/022 主分类号 H01S5/183
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