| 摘要 |
PROBLEM TO BE SOLVED: To suppress penetration of impurity to a gate electrode. SOLUTION: In a method of manufacturing a semiconductor device, polycrystalline silicon formed on a substrate is etched to form a first gate electrode 25A on a first region of the substrate, and a second gate electrode 25A is formed on a second region of the substrate. A first pattern covering the first region and the first gate electrode is formed, first impurity is implanted into the second region with a first dose and a first extension region is formed in the second region with the second gate electrode and the first pattern as masks. A second pattern where upper faces of the first gate electrode, the first region and the second gate electrode are exposed is formed. The first extension region is covered, second impurity is implanted into the first region with a dose larger than the first dose and a second extension region is formed with the first gate electrode, the second gate electrode and the second pattern as the masks. At least an upper part of the first gate electrode or the second gate electrode is made into amorphous. COPYRIGHT: (C)2011,JPO&INPIT
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