Power semiconductor module, has power semiconductor chip arranged on substrate, and heat sink contacting substrate directly and made of plastic-based injection molding compound that exhibits specific heat conductivity

摘要

The module has a power semiconductor chip arranged on a substrate (2), and a heat sink (3) contacting the substrate directly and made of plastic-based injection molding compound that exhibits heat conductivity of 5 Watt per meter Kelvin. The substrate comprises a flat isolation carrier (20) that is formed as a flat ceramics panel. The substrate is designed as a direct copper bonding substrate, direct aluminum bonding substrate, active metal bonding substrate or a metallic lead frame that is electrically isolated by an insulator layer. An independent claim is also included for a method for producing a power semiconductor module.